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930-950nm Chip
Product Detailed
Related Categories:Other Lights & Lighting Products
1.GaAs LED chip.
2.P-side up.
Physical Structure:
Characteristics | material | GaAs |
Structure | HOMO Structure | |
Junction size | 0.370mm*0.370mm | |
Thickness | 0.280mm | |
Bonding pad size | 0.115mm diameter | |
Anode Metallization | Gold alloy | |
Cathode Metallization | Gold alloy |
Electro-Optical Characteristics: (Ta=25°C)
Condition | MIN | TYP. | MAX. | UNIT |
Forward Voltage (VF) IF=20mA | 1.4 | V | ||
Reverse Voltage (VR) IR=10uA | 5 | V | ||
Radiant Power (P0) IF=20mA | 0.4 | mW | ||
Peak Wavelength (λP)IF=20mA | 930 | 950 | nm |
930-950nm Chip
